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December 2006
FDC638APZ
P-Channel 2.5V PowerTrench ? Specified MOSFET
–20V, –4.5A, 4 3 m ?
Features
Max r DS(on) = 4 3 m ? at V GS = –4.5V, I D = –4.5A
Max r DS(on) = 6 8 m ? at V GS = –2.5V, I D = –3.8A
Low gate charge ( 8 nC typical).
High performance trench technology for extremely low r DS(on).
SuperSOT TM –6 package:small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
RoHS Compliant
General Description
This P-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench ? process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance
These devices are well suited for battery power applications:load
switching and power management,battery charging circuits,and
DC/DC conversion.
Application
DC - DC Conversion
S
D
D
G
D
D
1
2
6
5
D
D
D
Pin 1
D
G
3 3
4
S
SuperSOT TM -6
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
–20
±12
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
(Note 1a)
–4.5
–20
A
P D
T J , T STG
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
1.6
0.8
–55 to +150
W
° C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a )
(Note 1b)
7 8
156
°C/W
Package Marking and Ordering Information
Device Marking
.638Z
?2006 Fairchild Semiconductor Corporation
FDC638APZ Rev.B
Device
FDC638APZ
1
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
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